The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Apr. 21, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsin-Yen Huang, New Taipei, TW;

Shao-Kuan Lee, Kaohsiung, TW;

Shau-Lin Shue, Hsinchu, TW;

Hsiao-Kang Chang, Hsinchu, TW;

Cherng-Shiaw Tsai, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/48 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3677 (2013.01); H01L 21/4871 (2013.01); H01L 23/373 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01);
Abstract

Various embodiments of the present disclosure are directed towards a semiconductor structure including a device layer having a front-side surface opposite a back-side surface. A first heat dispersion layer is disposed along the back-side surface of the device layer. A second heat dispersion layer underlies the front-side surface of the device layer. The second heat dispersion layer has a thermal conductivity lower than a thermal conductivity of the first heat dispersion layer.


Find Patent Forward Citations

Loading…