The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Jun. 14, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Tsung Shih, Hsinchu, TW;
Yu-Hsun Wu, New Taipei, TW;
Bo-Tsun Liu, Taipei, TW;
Tsung-Chuan Lee, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 1/24 (2012.01);
U.S. Cl.
CPC ...
G03F 7/2004 (2013.01); G03F 1/24 (2013.01);
Abstract
A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.