The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Oct. 02, 2019
Asml Netherlands B.v., Veldhoven, NL;
Pieter-Jan Van Zwol, Eindhoven, NL;
Sander Baltussen, Castenray, NL;
Dennis De Graaf, Waalre, NL;
Johannes Christiaan Leonardus Franken, Knegsel, NL;
Adrianus Johannes Maria Giesbers, Vlijmen, NL;
Alexander Ludwig Klein, Eindhoven, NL;
Johan Hendrik Klootwijk, Eindhoven, NL;
Peter Simon Antonius Knapen, Deurne, NL;
Evgenia Kurganova, Nijmegen, NL;
Alexey Sergeevich Kuznetsov, Zaltbommel, NL;
Arnoud Willem Notenboom, Rosmalen, NL;
Mahdiar Valefi, Eindhoven, NL;
Marcus Adrianus Van de Kerkhof, Helmond, NL;
Wilhelmus Theodorus Anthonius Johannes Van den Einden, Deurne, NL;
Ties Wouter Van der Woord, Eindhoven, NL;
Hendrikus Jan Wondergem, Veldhoven, NL;
Aleksandar Nikolov Zdravkov, Eindhoven, NL;
ASML NETHERLANDS B.V., Veldhoven, NL;
Abstract
A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.