The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Aug. 09, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Wei Jiang, Hsinchu, TW;

Sheng-Chih Lai, Hsinchu County, TW;

TsuChing Yang, Taipei, TW;

Hung-Chang Sun, Kaohsiung, TW;

Kuo-Chang Chiang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H01L 29/24 (2006.01); H10B 51/10 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H01L 29/24 (2013.01); H10B 51/10 (2023.02); H10B 51/30 (2023.02);
Abstract

A first conductive pillar is formed. A plurality of second conductive pillars are formed at different sides of the first conductive pillar. A plurality of dielectric pillars are respectively formed between the first conductive pillar and the plurality of second conductive pillars. A channel layer is formed to continuously surround the first conductive pillar, the plurality of second conductive pillars and the plurality of dielectric pillars. A memory material layer is formed to surround the channel layer.


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