The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Apr. 26, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun Hsiung Tsai, Hsinchu County, TW;
Ya-Yun Cheng, Taichung, TW;
Shahaji B. More, Hsinchu, TW;
Cheng-Yi Peng, Taipei, TW;
Wei-Yang Lee, Taipei, TW;
Kuo-Feng Yu, Hsinchu County, TW;
Yen-Ming Chen, Hsin-Chu County, TW;
Jian-Hao Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate; an isolation structure over the substrate; a fin over the substrate and the isolation structure; a gate structure engaging a first portion of the fin; first sidewall spacers over sidewalls of the gate structure and over a second portion of the fin; source/drain (S/D) features adjacent to the first sidewall spacers; and second sidewall spacers over the isolation structure and over sidewalls of a portion of the S/D features. The second sidewall spacers include silicon oxide, silicon nitride, or silicon oxynitride. The second sidewall spacers and the second portion of the fin include a same dopant, wherein the dopant includes phosphorus.