The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Mar. 23, 2023
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Shih-Yao Lin, New Taipei, TW;
Chih-Han Lin, Hsinchu, TW;
Shu-Uei Jang, Hsinchu, TW;
Ya-Yi Tsai, Hsinchu, TW;
Chi-Hsiang Chang, Taoyuan, TW;
Tzu-Chung Wang, Hsinchu, TW;
Shu-Yuan Ku, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsinchu, TW;
Abstract
A method includes forming a first fin and a second fin over a substrate. The method includes forming a first dummy gate structure that straddles the first fin and the second fin. The first dummy gate structure includes a first dummy gate dielectric and a first dummy gate disposed over the first dummy gate dielectric. The method includes replacing a portion of the first dummy gate with a gate isolation structure. The portion of the first dummy gate is disposed over the second fin. The method includes removing the first dummy gate. The method includes removing a first portion of the first dummy gate dielectric around the first fin, while leaving a second portion of the first dummy gate dielectric around the second fin intact. The method includes forming a gate feature straddling the first fin and the second fin, wherein the gate isolation structure intersects the gate feature.