The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Mar. 28, 2022
Tokyo Electron Limited, Tokyo, JP;
Shihsheng Chang, Albany, NY (US);
Andrew Metz, Albany, NY (US);
Yun Han, Albany, NY (US);
Minjoon Park, Albany, NY (US);
Ya-Ming Chen, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A semiconductor device structure includes a dielectric layer formed on a silicon substrate, an amorphous carbon layer (ACL) formed on the dielectric layer, and a charge dissipation layer formed between the ACL and the dielectric layer. The charge dissipation layer is formed from a material having a resistivity lower than the resistivity of the ACL. Methodologies to fabricate the semiconductor device structure are also disclosed and include forming the dielectric layer on the silicon substrate, forming the charge dissipation layer on the dielectric layer, and forming the ACL on the charge dissipation layer. Alternative semiconductor device structures and fabrication methodologies are also disclosed.