The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Jul. 19, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Min-Feng Kao, Chiayi, TW;

Dun-Nian Yaung, Taipei, TW;

Hsing-Chih Lin, Tainan, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/8234 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/823475 (2013.01); H01L 23/481 (2013.01); H01L 23/5223 (2013.01); H01L 23/528 (2013.01); H01L 24/08 (2013.01); H01L 24/89 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/0629 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01);
Abstract

Some embodiments relate to a method. In the method, semiconductor devices are formed on a frontside of a semiconductor substrate. A trench is formed in a backside of the semiconductor substrate. Conductive and insulating layers are alternatingly formed in the trench on the backside of the semiconductor substrate to establish a backside capacitor. A backside interconnect structure is formed on the backside of the semiconductor substrate to couple to capacitor electrodes of the backside capacitor.


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