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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12009362 B1

PDFFull Text
Date of Patent:
Jun. 11, 2024

Filed:

Jul. 27, 2023

Method of making amphi-fet structure and method of designing

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Yu Lai, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Chi-Yu Lu, Hsinchu, TW;

Shang-Syuan Ciou, Hsinchu, TW;

Hui-Zhong Zhuang, Hsinchu, TW;

Ching-Wei Tsai, Hsinchu, TW;

Shang-Wen Chang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Jonathan Han

Int. Cl.
CPC ...
H01L 27/06 (2006.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0694 (2013.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); H01L 21/0259 (2013.01); H01L 21/76898 (2013.01); H01L 21/8221 (2013.01); H01L 21/823412 (2013.01); H01L 21/823475 (2013.01); H01L 23/481 (2013.01); H01L 23/5283 (2013.01); H01L 29/0665 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01);
Abstract

A method of making a semiconductor device includes forming a first active region on a first side of a substrate. The method further includes forming a first source/drain (S/D) electrode surrounding a first portion of the first active region. The method further includes forming an S/D connect via extending through the substrate. The method further includes flipping the substrate. The method further includes forming a second active region on a second side of the substrate, wherein the second side of the substrate is opposite to the first side of the substrate. The method further includes forming a second S/D electrode surrounding a first portion of the second active region, wherein the S/D connect directly contacts both the first S/D electrode and the second S/D electrode.

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