The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Aug. 27, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Hung Chu, Taipei, TW;
Shuen-Shin Liang, Hsinchu County, TW;
Hsu-Kai Chang, Hsinchu, TW;
Tzu Pei Chen, Hsinchu, TW;
Kan-Ju Lin, Kaohsiung, TW;
Chien Chang, Hsinchu, TW;
Hung-Yi Huang, Hsin-chu, TW;
Sung-Li Wang, Zhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a layer of dielectric material over the gate structure, a source/drain (S/D) contact layer formed through and adjacent to the gate structure, and a trench conductor layer over and in contact with the S/D contact layer. The S/D contact layer can include a layer of platinum-group metallic material and a silicide layer formed between the substrate and the layer of platinum-group metallic material. A top width of a top portion of the layer of platinum-group metallic material can be greater than or substantially equal to a bottom width of a bottom portion of the layer of platinum-group metallic material.