The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Mar. 13, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Zhi-Chang Lin, Hsinchu County, TW;
Shih-Cheng Chen, New Taipei, TW;
Jung-Hung Chang, Changhua County, TW;
Lo-Heng Chang, Hsinchu, TW;
Chien-Ning Yao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a semiconductor substrate, a channel layer, a gate structure, source/drain epitaxial structures, and a dielectric isolation layer. The channel layer is over the semiconductor substrate. The gate structure is over the semiconductor substrate and surrounds the channel layer. The source/drain epitaxial structures are connected to the channel layer and arranged in a first direction. The dielectric isolation layer is between the gate structure and the semiconductor substrate. The dielectric isolation layer is wider than the gate structure but narrower than the channel layer in the first direction.