The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Aug. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shu-Cheng Chin, Hsinchu, TW;
Yao-Min Liu, Hsinchu, TW;
Hung-Wen Su, Hsinchu, TW;
Chih-Chien Chi, Hsinchu, TW;
Chi-Feng Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a semiconductor device includes etching an insulating layer to form a first opening and a second opening. The method further includes depositing a conductive material in the first opening. The method further includes performing a surface modification process on the conductive material. The method further includes depositing, after the surface modification process, a first liner layer in the second opening, wherein the first liner layer extends over the conductive material and the insulating layer. The method further includes depositing a conductive fill over the first liner layer, wherein the conductive fill includes a different material from the conductive material.