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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11978663 B1

PDFFull Text
Date of Patent:
May. 07, 2024

Filed:

Mar. 13, 2023

Integrated circuit interconnect structure having discontinuous barrier layer and air gap

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chin-Lung Chung, Taoyuan, TW;

Shin-Yi Yang, New Taipei, TW;

Ming-Han Lee, Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Karen Kusumakar

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76834 (2013.01); H01L 21/76819 (2013.01); H01L 21/7682 (2013.01); H01L 21/76832 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01);
Abstract

A semiconductor structure includes a first dielectric layer, a first metallic feature over the first dielectric layer, an air gap over the first dielectric layer and adjacent to the first metallic feature, a second dielectric layer disposed above the air gap and on a sidewall of the first metallic feature, and a third dielectric layer disposed above the air gap and on a sidewall of the second dielectric layer. A lower portion of the first metallic feature is exposed in the air gap. The third and the second dielectric layers are substantially co-planar.

Find Patent Forward Citations

Chung, Chin-Lung. (2024). Integrated circuit interconnect structure having discontinuous barrier layer and air gap (U.S. Patent No. 11978663). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11978663

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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