The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Dec. 14, 2021
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Aihua Wu, Shijiazhuang, CN;
Yibang Wang, Shijiazhuang, CN;
Faguo Liang, Shijiazhuang, CN;
Chen Liu, Shijiazhuang, CN;
Ye Huo, Shijiazhuang, CN;
Peng Luan, Shijiazhuang, CN;
Jing Sun, Shijiazhuang, CN;
Yanli Li, Shijiazhuang, CN;
Abstract
A method includes: constructing an on-wafer calibration piece model set that includes one or more on-wafer calibration piece models, where each of the one or more on-wafer calibration piece models has a corresponding on-wafer calibration piece; selecting an on-wafer calibration piece model from the on-wafer calibration piece model set; measuring the on-wafer calibration piece utilizing an on-wafer S parameter measurement system that is calibrated using a multi-thread TRL calibration method in a Terahertz frequency band, to obtain an S parameter of the on-wafer calibration piece; and calculating a plurality of different parameters that represent crosstalk of calibration pieces in the on-wafer calibration piece model, according to an admittance calculated according to the S parameter and an admittance formula corresponding to the on-wafer calibration piece model.