The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2024

Filed:

May. 12, 2020
Applicant:

Kla Corporation, Milpitas, CA (US);

Inventors:

Ankur Agarwal, Milpitas, CA (US);

Chad Huard, Austin, TX (US);

Yiting Zhang, Milpitas, CA (US);

Haifeng Pu, Shanghai, CN;

Xin Li, Shanghai, CN;

Premkumar Panneerchelvam, Austin, TX (US);

Fiddle Han, Shanghai, CN;

Yeurui Chen, Milpitas, CA (US);

Assignee:

KLA Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05B 13/04 (2006.01); G01B 11/24 (2006.01); G01B 15/04 (2006.01); G01N 21/21 (2006.01); G01N 23/201 (2018.01); G06F 17/14 (2006.01);
U.S. Cl.
CPC ...
G05B 13/042 (2013.01); G01B 11/24 (2013.01); G01B 15/045 (2013.01); G01N 21/21 (2013.01); G01N 23/201 (2013.01); G01N 2223/054 (2013.01); G01N 2223/40 (2013.01); G06F 17/14 (2013.01);
Abstract

A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.


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