The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Jun. 04, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yun Han, Albany, NY (US);

Caitlin Philippi, Albany, NY (US);

Andrew Metz, Albany, NY (US);

Alok Ranjan, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/32 (2006.01); C23C 16/42 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/04 (2013.01); C23C 16/32 (2013.01); C23C 16/42 (2013.01); H01L 21/02115 (2013.01); H01L 21/0212 (2013.01); H01L 21/02123 (2013.01); H01L 21/02178 (2013.01);
Abstract

A method for processing a substrate includes performing a cyclic plasma process including a plurality of cycles, each cycle of the plurality of cycles including purging a plasma processing chamber including the substrate with a first deposition gas including carbon. The substrate includes a first layer including silicon and a second layer including a metal oxide. The method further includes exposing the substrate to a first plasma generated from the first deposition gas to selectively deposit a first polymeric film over the first layer relative to the second layer; purging the plasma processing chamber with an etch gas including fluorine; and exposing the substrate to a second plasma generated from the etch gas to etch the second layer.


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