The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Feb. 06, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Hsin-Hung Chen, Tainan, TW;
Min-Feng Kao, Chiayi, TW;
Hsing-Chih Lin, Tainan, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Dun-Nian Yaung, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/0228 (2013.01); H01L 21/30604 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01);
Abstract
A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.