The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Nov. 26, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eun Hyea Ko, Suwon-si, KR;
Hee Yeon Jeong, Jecheon-si, KR;
Jun Hee Cho, Daejeon, KR;
Gyu-Hee Park, Hwaseong-si, KR;
Joong Jin Park, Daejeon, KR;
Byeong Il Yang, Daejeong, KR;
Youn Joung Cho, Hwaseong-si, KR;
Ji Yu Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., , KR;
DNF Co., Ltd., , KR;
Abstract
An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C-Calkyl group, and N is nitrogen.