The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Che Tu, Hsinchu, TW;

Po-Han Wang, Hsinchu, TW;

Sih-Hao Liao, New Taipei, TW;

Yu-Hsiang Hu, Hsinchu, TW;

Hung-Jui Kuo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/768 (2006.01); H01L 21/027 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); H01L 21/0274 (2013.01); H01L 21/76802 (2013.01); G03F 7/039 (2013.01);
Abstract

A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a portion of the photoresist corresponding to a portion of the first stitching region is unexposed during the first light-exposure. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region and a functional feature in the second stitching region, and the portion of the photoresist is exposed by the functional feature during the second light-exposure.


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