The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Nov. 21, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Meng Yan, Wuhan, CN;

Jia Wen Wang, Wuhan, CN;

Si Ping Hu, Wuhan, CN;

Shun Hu, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/544 (2006.01); H01L 25/065 (2023.01); H10B 43/50 (2023.01); H01L 23/00 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); G03F 9/7049 (2013.01); G03F 9/7088 (2013.01); G03F 9/7092 (2013.01); H01L 23/544 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H10B 43/50 (2023.02); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/04 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/8013 (2013.01); H01L 2224/80132 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80905 (2013.01); H01L 2224/80908 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06565 (2013.01);
Abstract

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed on a first substrate. A first bonding layer including a first bonding contact and a first bonding alignment mark is formed above the first device layer. A second device layer is formed on a second substrate. A second bonding layer including a second bonding contact and a second bonding alignment mark is formed above the second device layer. The first bonding alignment mark is aligned with the second bonding alignment mark, such that the first bonding contact is aligned with the second bonding contact. The first substrate and the second substrate are bonded in a face-to-face manner, so that the first bonding contact is in contact with the second bonding contact at a bonding interface, and the first bonding alignment mark is in contact with the second bonding alignment mark at the bonding interface.


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