The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Mar. 04, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tzu-Yu Chen, Kaohsiung, TW;
Sheng-Hung Shih, Hsinchu, TW;
Fu-Chen Chang, New Taipei, TW;
Kuo-Chi Tu, Hsinchu, TW;
Wen-Ting Chu, Kaohsiung, TW;
Alexander Kalnitsky, San Francisco, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device is provided. The method includes depositing a bottom electrode layer over a substrate; depositing a ferroelectric layer over the bottom electrode layer; depositing a first top electrode layer over the ferroelectric layer, wherein the first top electrode layer comprises a first metal; depositing a second top electrode layer over the first top electrode layer, wherein the second top electrode layer comprises a second metal, and a standard reduction potential of the first metal is greater than a standard reduction potential of the second metal; and removing portions of the second top electrode layer, the first top electrode layer, the ferroelectric layer, and the bottom electrode layer to form a memory stack, the memory stack comprising remaining portions of the second top electrode layer, the first top electrode layer, the ferroelectric layer, and the bottom electrode layer.