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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11855220 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Jun. 27, 2022

Method and structure for air gap inner spacer in gate-all-around devices

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Chiang Chen, Taichung, TW;

Wei-Yang Lee, Taipei, TW;

Chia-Pin Lin, Hsinchu County, TW;

Yuan-Ching Peng, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/66795 (2013.01);
Abstract

A device a includes a substrate, two source/drain (S/D) features over the substrate, and semiconductor layers suspended over the substrate and connecting the two S/D features. The device further includes a dielectric layer disposed between two adjacent layers of the semiconductor layers and an air gap between the dielectric layer and one of the S/D features, where a ratio between a length of the air gap to a thickness of the first dielectric layer is in a range of 0.1 to 1.0.

Find Patent Forward Citations

Chen, Shih-Chiang. (2023). Method and structure for air gap inner spacer in gate-all-around devices (U.S. Patent No. 11855220). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11855220

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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