The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Nov. 18, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chita Chuang, Kaohsiung, TW;

Yao-Chun Chuang, Taipei, TW;

Tsung-Shu Lin, Yonghe, TW;

Chen-Cheng Kuo, Chu-Pei, TW;

Chen-Shien Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 23/3192 (2013.01); H01L 24/16 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13169 (2013.01); H01L 2224/16237 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/206 (2013.01); H01L 2924/381 (2013.01);
Abstract

A semiconductor device includes a conductive pad having a first width. The semiconductor device includes a passivation layer over the conductive pad, wherein the passivation layer directly contacts the conductive pad. The semiconductor device includes a protective layer over the passivation layer, wherein the protective layer directly contacts the conductive pad. The semiconductor device includes an under-bump metallization (UBM) layer directly contacting the conductive pad, wherein the UBM layer has a second width greater than the first width. The semiconductor device includes a conductive pillar on the UBM layer.


Find Patent Forward Citations

Loading…