The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Mar. 02, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Hsuan Tsai, Taitung, TW;

Chin-Chuan Chang, Hsinchu County, TW;

Szu-Wei Lu, Hsinchu, TW;

Tsung-Fu Tsai, Changhua County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/00 (2006.01); H01L 25/10 (2006.01); H01L 25/16 (2023.01); H01L 23/522 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5383 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 23/49822 (2013.01); H01L 23/5226 (2013.01); H01L 24/05 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2224/02372 (2013.01);
Abstract

A semiconductor package includes a first semiconductor die, a second semiconductor die, a semiconductor bridge, an integrated passive device, a first redistribution layer, and connective terminals. The second semiconductor die is disposed beside the first semiconductor die. The semiconductor bridge electrically connects the first semiconductor die with the second semiconductor die. The integrated passive device is electrically connected to the first semiconductor die. The first redistribution layer is disposed over the semiconductor bridge. The connective terminals are disposed on the first redistribution layer, on an opposite side with respect to the semiconductor bridge. The first redistribution layer is interposed between the integrated passive device and the connective terminals.


Find Patent Forward Citations

Loading…