The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Apr. 15, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Yu Lai, Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Chi-Yu Lu, Hsinchu, TW;
Shang-Syuan Ciou, Hsinchu, TW;
Hui-Zhong Zhuang, Hsinchu, TW;
Ching-Wei Tsai, Hsinchu, TW;
Shang-Wen Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate and a first transistor on a first side of the substrate. The semiconductor device further includes a first electrode contacting a first region of the first transistor. The semiconductor device further includes a spacer extending along a sidewall of the first transistor. The semiconductor device further includes a self-aligned interconnect structure (SIS) separated from at least a portion of the first electrode by the spacer, wherein the SIS extends through the substrate. The semiconductor device further includes a second electrode contacting a surface of the first electrode farthest from the substrate, wherein the second electrode directly contacts the SIS.