The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Mar. 12, 2020
Applicant:

Nova Measuring Instruments, Inc., Santa Clara, CA (US);

Inventors:

Heath A. Pois, Fremont, CA (US);

Laxmi Warad, Milpitas, CA (US);

Srinivasan Rangarajan, Morgan Hill, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01B 15/02 (2006.01); G01N 23/2273 (2018.01);
U.S. Cl.
CPC ...
G01B 15/02 (2013.01); G01N 23/2273 (2013.01); G01N 2223/61 (2013.01);
Abstract

Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.


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