The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Nov. 12, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Chen-Hua Yu, Hsinchu, TW;
Chi-Hsi Wu, Hsinchu, TW;
Der-Chyang Yeh, Hsinchu, TW;
Hsien-Wei Chen, Hsinchu, TW;
An-Jhih Su, Taoyuan County, TW;
Tien-Chung Yang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/06593 (2013.01);
Abstract
The semiconductor structure includes a plurality of first dies, a plurality of second dies disposed over each of the first dies, and a dielectric material surrounding the plurality of first dies and the plurality of second die. Each of the second dies overlaps a portion of each first die.