The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Aug. 02, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Xinyu Bao, Fremont, CA (US);

Lee-Chung Lu, Taipei, TW;

Jyh Chwen Frank Lee, Palo Alto, CA (US);

Fong-yuan Chang, Hsinchu, TW;

Sam Vaziri, San Jose, CA (US);

Po-Hsiang Huang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/42 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/42 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 21/566 (2013.01); H01L 23/295 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/08 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/105 (2013.01); H01L 2224/08237 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48229 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/182 (2013.01); H01L 2924/186 (2013.01); H01L 2924/1811 (2013.01); H01L 2924/351 (2013.01);
Abstract

Packaged semiconductor devices including high-thermal conductivity molding compounds and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution structure; a first die over and electrically coupled to the first redistribution structure; a first through via over and electrically coupled to the first redistribution structure; an insulation layer extending along the first redistribution structure, the first die, and the first through via; and an encapsulant over the insulation layer, the encapsulant surrounding portions of the first through via and the first die, the encapsulant including conductive fillers at a concentration ranging from 70% to about 95% by volume.


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