The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Apr. 21, 2021
Asm Ip Holding B.v., Almere, NL;
KiKang Kim, Yongin-si, KR;
HakYong Kwon, Yongin-si, KR;
HieChul Kim, Hwaseong-si, KR;
SungKyu Kang, Hwaseong-si, KR;
SeungHwan Lee, Anseong-si, KR;
SungBae Kim, Yongin-si, KR;
JongHyun Ahn, Hwaseong-si, KR;
SeongRyeong Kim, Hwaseong-si, KR;
KyuMin Kim, Anyang-si, KR;
YoungMin Kim, Hwaseong-si, KR;
ASM IP Holding B.V., Almere, NL;
Abstract
This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.