The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Sep. 24, 2019
Intel Corporation, Santa Clara, CA (US);
Ryan Keech, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Nicholas G. Minutillo, Beaverton, OR (US);
Suresh Vishwanath, Phoenix, AZ (US);
Mohammad Hasan, Aloha, OR (US);
Biswajeet Guha, Hillsboro, OR (US);
Subrina Rafique, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Integrated circuit structures having source or drain structures with abrupt dopant profiles are described. In an example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires. A second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal nanowires. The first and second epitaxial source or drain structures include silicon, phosphorous and arsenic, with an atomic concentration of phosphorous substantially the same as an atomic concentration of arsenic.