The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Oct. 16, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yukinobu Otsuka, Koshi, JP;

Shinsuke Takaki, Koshi, JP;

Yasuhiro Kuga, Koshi, JP;

Koji Ushimaru, Koshi, JP;

Ryohei Fujise, Koshi, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01); F27B 17/00 (2006.01); G03F 7/16 (2006.01); F27D 3/00 (2006.01); H05B 3/22 (2006.01); H05B 1/02 (2006.01); F27D 5/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67109 (2013.01); F27B 17/0025 (2013.01); F27B 17/0083 (2013.01); F27D 3/0084 (2013.01); F27D 5/0037 (2013.01); G03F 7/168 (2013.01); H01L 21/6838 (2013.01); H01L 21/68742 (2013.01); H05B 1/0233 (2013.01); H05B 3/22 (2013.01);
Abstract

A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.


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