The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Jul. 27, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jung-Tang Wu, Kaohsiung, TW;
Pao-Sheng Chen, Tainan, TW;
Pei-Hsuan Lee, Taipei, TW;
Szu-Hua Wu, Hsinchu County, TW;
Chih-Chien Chi, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device, includes: forming a metal layer on a semiconductor substrate; forming a dielectric layer over the metal layer; etching a top portion of the dielectric layer; after etching the top portion of the dielectric layer, removing first mist from a bottom portion of the dielectric layer; removing the bottom portion of the dielectric layer to expose the metal layer; performing a pre-clean operation, using an alcohol base vapor or an aldehyde base vapor, on the dielectric layer and the metal layer; and forming a conductor extending through the dielectric layer and in contact with the metal layer.