The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Jul. 02, 2021
Applicant:

Wonik Ips Co., Ltd., Pyeongtaek-si, KR;

Inventors:

Kwang Seon Jin, Osan-si, KR;

Sang Jun Park, Yongin-si, KR;

Byung Chul Cho, Hwaseong-si, KR;

Jun Hyuck Kwon, Osan-si, KR;

Jong Ki An, Daejeon, KR;

Tian Hao Han, Suwon-si, KR;

Assignee:

WONIK IPS CO., LTD., Pyeongtaek-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32522 (2013.01); H01J 37/3244 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.


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