Osan-si, South Korea

Jun Hyuck Kwon

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.3

ph-index = 1


Company Filing History:


Years Active: 2022-2024

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3 patents (USPTO):Explore Patents

Title: Innovations by Jun Hyuck Kwon

Introduction

Jun Hyuck Kwon is a notable inventor based in Osan-si, South Korea. He has made significant contributions to the field of substrate processing and atomic layer etching. With a total of 3 patents to his name, Kwon continues to push the boundaries of technology in his area of expertise.

Latest Patents

One of his latest patents is a substrate processing method. This method utilizes a substrate processing apparatus that includes a process chamber defining a processing space. The apparatus features a substrate support for placing a substrate, a gas sprayer for supplying process gas, and a remote plasma generator. The method involves placing the substrate on the support, continuously supplying a surface processing gas, and activating it with plasma power. The process concludes with the supply of an etching gas onto the substrate.

Another significant patent is the method and apparatus for atomic layer etching. This method includes providing a substrate with a material to be etched. It involves controlling the substrate at different temperatures to modify and remove the surface layer of the material using a modifying gas and an etching gas.

Career Highlights

Jun Hyuck Kwon is currently employed at Wonik Ips Co., Ltd. His work focuses on advancing technologies related to substrate processing and etching methods. His innovative approaches have garnered attention in the industry.

Collaborations

Kwon has collaborated with notable coworkers, including Kwang Seon Jin and Sang Jun Park. Their combined expertise contributes to the success of their projects and innovations.

Conclusion

Jun Hyuck Kwon's contributions to substrate processing and atomic layer etching highlight his role as a leading inventor in his field. His patents reflect a commitment to innovation and technological advancement.

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