Wonik Ips Co., Ltd.

Jun Hyuck Kwon

Sang Jun Park

Byung Chul Cho

Kwang Seon Jin

Jin Sung Chun

Tian Hao Han

Jong Ki An

A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.

Substrate processing method

A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.

Method and apparatus for atomic layer etching

The present invention relates to an atomic layer etching method for etching a surface of a substrate by using an atomic layer etching apparatus. The present invention provides an atomic layer etching method by using an atomic layer etching apparatus including a process chamber having a sealed process space, a gas injection unit installed at an upper side in the process chamber to inject a gas into the process space, a substrate support installed at a lower side in the process chamber and on which a substrate is seated, and a remote plasma generation device, the atomic layer etching method including: a substrate preparing process (S) of preparing a substrate () on the substrate support; a modification process (S) of modifying a surface layer () of the substrate () by radicalizing a modification gas containing a halogen gas except hydrogen fluoride (HF) through the remote plasma generation device coupled to the process chamber and supplying the radicalized modification gas onto the substrate () after the substrate preparing process (S); a first purge process (S) of purging the surface layer; a surface layer removal process (S) of removing the surface layer () modified in the modification process (S) by supplying a metal-containing precursor to the surface layer (); and a second purge process (S) of purging a surface of the substrate ().

Growing community of inventors

Osan-si, South Korea

Jun Hyuck Kwon