The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Jun. 27, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Ehren Mannebach, Beaverton, OR (US);

Aaron Lilak, Beaverton, OR (US);

Hui Jae Yoo, Portland, OR (US);

Patrick Morrow, Portland, OR (US);

Kevin L. Lin, Beaverton, OR (US);

Tristan Tronic, Aloha, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/515 (2013.01); H01L 29/6653 (2013.01);
Abstract

A device is disclosed. The device includes a gate conductor, a first source-drain region and a second source-drain region. The device includes a first air gap space between the first source-drain region and a first side of the gate conductor and a second air gap space between the second source-drain region and a second side of the gate conductor. A hard mask layer that includes holes is under the gate conductor, the first source-drain region, the second source-drain region and the air gap spaces. A planar dielectric layer is under the hard mask.


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