The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Jul. 09, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Satoshi Toda, Nirasaki, JP;

Naoki Shindo, Nirasaki, JP;

Haruna Suzuki, Tokyo, JP;

Gen You, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32138 (2013.01); H01L 21/67069 (2013.01); H01L 21/76865 (2013.01); H01L 21/76888 (2013.01);
Abstract

An etching method includes: providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film; performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoFgas and a WFgas into the chamber; when a pore present inside the first film is exposed by the first etching, filling the pore with one of molybdenum and tungsten by stopping the first etching and supplying a reduction gas and a second gas selected the MoFgas and the WFgas into the chamber; and performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a third gas selected from the MoFgas and the WFgas into the chamber.


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