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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11761075 B1

PDFFull Text
Date of Patent:
Sep. 19, 2023

Filed:

Oct. 25, 2016

Substrate cleaning apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yukimasa Saito, Yamanashi, JP;

Toshiki Hinata, Yamanashi, JP;

Kazuya Dobashi, Yamanashi, JP;

Kyoko Ikeda, Yamanashi, JP;

Shuji Moriya, Yamanashi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

WEIHROUCH IP

Primary Examiner:

Erin F Bergner

Int. Cl.
CPC ...
H01L 21/67 (2006.01); C23C 14/02 (2006.01); H01L 21/687 (2006.01); C23C 16/458 (2006.01); C23C 16/44 (2006.01); C23C 16/02 (2006.01); A47L 5/14 (2006.01); B08B 13/00 (2006.01); B08B 5/00 (2006.01); H01L 21/304 (2006.01); C23C 14/50 (2006.01); C23C 14/56 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 14/022 (2013.01); A47L 5/14 (2013.01); B08B 5/00 (2013.01); B08B 13/00 (2013.01); C23C 14/021 (2013.01); C23C 14/505 (2013.01); C23C 14/564 (2013.01); C23C 16/02 (2013.01); C23C 16/0227 (2013.01); C23C 16/4401 (2013.01); C23C 16/4412 (2013.01); C23C 16/4584 (2013.01); H01L 21/02041 (2013.01); H01L 21/304 (2013.01); H01L 21/67017 (2013.01); H01L 21/6719 (2013.01); H01L 21/67028 (2013.01); H01L 21/68714 (2013.01); H01L 21/68764 (2013.01); H01L 21/68785 (2013.01); B08B 2205/00 (2013.01);
Abstract

A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

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