The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Nov. 09, 2022
Intel Corporation, Santa Clara, CA (US);
Adel A. Elsherbini, Chandler, AZ (US);
Veronica Aleman Strong, Hillsboro, OR (US);
Shawna M. Lift, Scottsdale, AZ (US);
Brandon M. Rawlings, Chandler, AZ (US);
Jagat Shakya, Hillsboro, OR (US);
Johanna M. Swan, Scottsdale, AZ (US);
David M. Craig, Hillsboro, OR (US);
Jeremy Alan Streifer, Beaverton, OR (US);
Brennen Karl Mueller, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the first microelectronic component is coupled to the second microelectronic component by interconnects, and wherein the interconnects include individual first metal contacts coupled to respective individual second metal contacts; and a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the first direct bonding region.