The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
May. 10, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chang-Jung Hsueh, Taipei, TW;
Chen-En Yen, Changhua County, TW;
Chin Wei Kang, Tainan, TW;
Kai Jun Zhan, Taoyuan, TW;
Wei-Hung Lin, Xinfeng Township, TW;
Cheng Jen Lin, Kaohsiung, TW;
Ming-Da Cheng, Taoyuan, TW;
Ching-Hui Chen, Hsinchu, TW;
Mirng-Ji Lii, Sinpu Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.