The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Aug. 13, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Gu-Huan Li, Hsinchu County, TW;
Tung-Cheng Chang, Miaoli County, TW;
Perng-Fei Yuh, Walnut Creek, CA (US);
Chia-En Huang, Hsinchu County, TW;
Chun-Ying Lee, Hsinchu, TW;
Yih Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A memory device is disclosed, including a bit cell storing a bit data. The bit cell includes multiple first transistors coupled to a node, multiple second transistors each coupled in series to a corresponding one of the first transistors, and at least one third transistor. The first transistors are turned on in response to a control signal. The second transistors are turned on in response to a first word line signal. The at least one third transistor has a control terminal to receive a second word line signal. In a programming mode of the memory device, the at least one third transistor provides, in response to the second word line signal, an adjust voltage to the node. The adjust voltage is associated with a voltage level of a first terminal of the at least one third transistor.