The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Dec. 14, 2021
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Yibang Wang, Shijiazhuang, CN;
Aihua Wu, Shijiazhuang, CN;
Faguo Liang, Shijiazhuang, CN;
Chen Liu, Shijiazhuang, CN;
Ye Huo, Shijiazhuang, CN;
Peng Luan, Shijiazhuang, CN;
Jing Sun, Shijiazhuang, CN;
Yanli Li, Shijiazhuang, CN;
Abstract
The present application provides two-port on-wafer calibration piece circuit models and a method for determining parameters. The method includes: measuring a single-port on-wafer calibration piece circuit model corresponding to a first frequency band to obtain a first S parameter; calculating, according to the first S parameter, an intrinsic capacitance value of a two-port on-wafer calibration piece circuit model corresponding to the single-port on-wafer calibration piece circuit model; measuring the two-port on-wafer calibration piece circuit model corresponding to the terahertz frequency band to obtain a second S parameter; and calculating a parasitic capacitance value and a parasitic resistance value of the two-port on-wafer calibration piece circuit model according to the second S parameter and the intrinsic capacitance value.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile