The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Mar. 26, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Szu-Ping Tung, Taipei, TW;
Chun-Kai Chen, Kaohsiung, TW;
Tze-Liang Lee, Hsinchu, TW;
Yi-Nien Su, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/311 (2013.01); H01L 21/31105 (2013.01); H01L 21/31116 (2013.01); H01L 21/31127 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01);
Abstract
In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.