The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Oct. 27, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Ao Chang, Jinhu Township, TW;
De-Wei Yu, Ping-tung, TW;
Chii-Horng Li, Zhubei, TW;
Yee-Chia Yeo, Hsinchu, TW;
Hsueh-Chang Sung, Zhubei, TW;
Pei-Ren Jeng, Chu-Bei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes depositing a film over a dielectric layer. The dielectric layer is over a first fin, a second fin, and within a trench between the first fin and the second fin. The method further includes etching top portions of the film, performing a treatment on the dielectric layer to remove impurities after etching the top portions of the film, and filling the trench over the remaining portions of the film. The treatment includes bombarding the dielectric layer with radicals.