The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Sep. 24, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shih-Yu Tu, Hsinchu, TW;
Chieh Hsieh, Hsinchu, TW;
Shang-Chieh Chien, Hsinchu, TW;
Li-Jui Chen, Hsinchu, TW;
Heng-Hsin Liu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/00 (2006.01); H05G 2/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/7085 (2013.01); G03F 7/70033 (2013.01); G03F 7/70916 (2013.01); G03F 7/70925 (2013.01); H05G 2/005 (2013.01); H05G 2/008 (2013.01);
Abstract
An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.