The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Oct. 27, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Wilfred Gomes, Portland, OR (US);

Mauro J. Kobrinsky, Portland, OR (US);

Conor P. Puls, Portland, OR (US);

Kevin Fischer, Hillsboro, OR (US);

Bernhard Sell, Portland, OR (US);

Abhishek A. Sharma, Hillsboro, OR (US);

Tahir Ghani, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 29/24 (2006.01); H01L 49/02 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 28/60 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78681 (2013.01); H10B 12/05 (2023.02); H10B 12/50 (2023.02); H01L 2224/32225 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1437 (2013.01); H10B 10/12 (2023.02);
Abstract

Described herein are IC devices that include TFT based memory arrays on both sides of a layer of logic devices. An example IC device includes a support structure (e.g., a substrate) on which one or more logic devices may be implemented. The IC device further includes a first memory cell on one side of the support structure, and a second memory cell on the other side of the support structure, where each of the first memory cell and the second memory cell includes a TFT as an access transistor. Providing TFT based memory cells on both sides of a layer of logic devices allows significantly increasing density of memory cells in a memory array having a given footprint area, or, conversely, significantly reducing the footprint area of the memory array with a given memory cell density.


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