The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Jan. 15, 2021
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Edward Fuergut, Dasing, DE;

Irmgard Escher-Poeppel, Duggendorf, DE;

Martin Gruber, Schwandorf, DE;

Ivan Nikitin, Regensburg, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 24/35 (2013.01); H01L 24/37 (2013.01); H01L 21/56 (2013.01); H01L 23/3107 (2013.01); H01L 23/485 (2013.01); H01L 23/495 (2013.01); H01L 24/03 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 2224/0312 (2013.01); H01L 2224/03442 (2013.01); H01L 2224/03502 (2013.01); H01L 2224/03848 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05575 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/35848 (2013.01); H01L 2224/35986 (2013.01); H01L 2224/37005 (2013.01); H01L 2224/37011 (2013.01); H01L 2224/82101 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.


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