The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Jul. 27, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Chun-Hung Liao, Taichung, TW;
Chung-Wei Hsu, Hsinchu County, TW;
Tsung-Ling Tsai, Hsinchu, TW;
Chen-Hao Wu, Hsinchu, TW;
An-Hsuan Lee, Hsinchu, TW;
Shen-Nan Lee, Hsinchu County, TW;
Teng-Chun Tsai, Hsinchu, TW;
Huang-Lin Chao, Hillsboro, OR (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01); C09K 3/14 (2006.01); H01L 21/306 (2006.01); C09G 1/02 (2006.01); H01L 21/3063 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); C23F 1/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31053 (2013.01); C09G 1/02 (2013.01); C09K 3/1409 (2013.01); C23F 1/12 (2013.01); H01L 21/02019 (2013.01); H01L 21/3063 (2013.01); H01L 21/30625 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01);
Abstract
The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.