The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Apr. 05, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Ming Hung Tseng, Miaoli County, TW;
Yen-Liang Lin, Taichung, TW;
Tzu-Sung Huang, Tainan, TW;
Tin-Hao Kuo, Hsinchu, TW;
Hao-Yi Tsai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a first redistribution structure by depositing a first dielectric layer and forming first and second conductive features on the first dielectric layer, the second conductive feature being provided with a gap exposing the first dielectric layer. The method further includes depositing a second dielectric layer on the first and second conductive features; forming first and second openings in the second dielectric layer, the first opening exposing the first conductive feature and the second opening exposing the second conductive feature and the gap; forming a first via on the first conductive feature and partially in the first opening; forming a second via on the second conductive feature and partially in the second opening and the gap; attaching a die to the first redistribution structure adjacent the first via and the second via; and encapsulating the die, the first via, and the second via with an encapsulant.