The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Aug. 09, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chun Hsiung Tsai, Hsinchu County, TW;
Cheng-Yi Peng, Taipei, TW;
Ching-Hua Lee, Hsinchu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Yu-Ming Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
Methods of manufacturing a semiconductor structure are provided. One of the methods includes the following operations. A substrate is received, and the substrate includes a first conductive region and a second conductive region. A first laser anneal is performed on the first conductive region to repair lattice damage. An amorphization is performed on the first conductive region and the second conductive region to enhance silicide formation to a desired phase transformation in the subsequent operations. A pre-silicide layer is formed on the substrate. A thermal anneal is performed to the substrate to form a silicide layer from the pre-silicide layer. A second laser anneal is performed on the first conductive region and the second conductive region.